Electrical properties of the Cu(In,Ga)Se2/MoSe2/Mo structure

We investigated the electrical properties of the Cu(In,Ga)Se-2/MoSe2/Mo structure. CIGS/Mo heterocontact including the MoSe2 layer is not Schottky-type but a favorable ohmic-type contact by the evaluation of dark I-V measurement at low temperature. A characteristic peak at 870 nm is observed in differential quantum efficiency of a solar cell with a CIGS thickness of 0.5 mum. This peak is considered with relating to the absorption of the MoSe2 layer. The band gap of MoSe2 is calculated to be 1.41eV from the absorption peak. The band diagram is discussed on the basis of the electrical point of view. (C) 2001 Elsevier Science B.V. All rights reserved.