期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 13, 期 3, 页码 173-175出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/68.914311
关键词
high-power laser; lifetime testing; semiconductor lasers; vertical-cavity surface-emitting laser (VCSEL)
Selectively oxidized InGaAs vertical-cavity surface-emitting lasers (VCSELs) at an emission wavelength of lambda = 980 nm are investigated for high-power applications. Densely packed arrays consisting of 19 single devices with an active diameter of 50 mum emit 1.08 W of continuous-wave (CW) optical output power at room temperature. At 10 degreesC, heat sink temperature the output power increases to 1.4 W, which corresponds to a chip size averaged power density of 1 kW.cm(2). Low divergence angle of less than 16 degrees full-width at half-maximum (FWHM) and the circularly symmetric far-field pattern allow for simple focusing of the beam with power densities above 10 kW.cm(2).
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