期刊
APPLIED SURFACE SCIENCE
卷 172, 期 1-2, 页码 47-50出版社
ELSEVIER
DOI: 10.1016/S0169-4332(00)00827-8
关键词
IR absorption; thin films; hydrogenated amorphous silicon carbide (a-SiC : H)
The usual method for deposition of hydrogenated amorphous silicon carbide (a-SiC:H) thin films is the radio-frequency (rf) magnetron sputtering method in an Ar and CH4 mixture. In this paper, we present a dc magnetron sputtering method for a-SiC:H thin films. The films were deposited in a mixture of CH4, H-2 and Ar. The target used was polycrystalline Si. We found that the hydrogen partial pressure has a decisive contribution to the film composition. The presence of hydrogen leads to dominant Si-C bonds in film composition while the absence of molecular hydrogen leads to a dominant C-H bonds in film composition. Also, the total pressure during the deposition was found to play an important role for the film composition. (C) 2001 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据