期刊
SOLID-STATE ELECTRONICS
卷 45, 期 3, 页码 427-430出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1101(01)00044-2
关键词
Mg-doped InxGa1-xN; wall measurement; carrier concentration; mobility; in mole fraction; photoluminescence
This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bull; Mg-doped InxGa1-xN is 1.65 x 10(19) cm(-3). Also, the RT photoluminescence (PL) spectra of Mg related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process. (C) 2001 Elsevier Science Ltd. All rights reserved.
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