期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 48, 期 3, 页码 586-590出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.906455
关键词
AlGaN; FET; flip-chip; GaN; HEMT; microwave power
Research work focusing on the enhancement of large-signal current-voltage (I-V) capabilities has resulted in significant performance improvement for AlGaN/GaN HEMT's. 100-150 mum wide devices grown on SIC substrates demonstrated a record power density of 9.8 W/mm at 8 GHz, which is about ten times higher than GaAs-based FETs; similar devices grown on sapphire substrates showed 6.5 W/mm, which was thermally limited, 2-mm-wide devices flip-chip mounted on to AlN substrates produced 9.2-9.8 W output power at 8 GHz with 44-47% PAE, A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date.
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