Domain switching, rotation processes and dielectric response of polycrystalline Pb(ZrxTi1-x)O3 thin films

Experimental data on the dielectric hysteresis and the capacitance-voltage characteristics are analysed for polycrystalline Pb(ZrxTi1-x)O-3 thin films. An analytical description of the effect of the domain structure, 90 degrees rotation and 180 degrees switching processes on the dielectric permittivity is proposed by taking into account the poling field characteristics of different domain types. A distinct correlation between these processes and an asymmetric behaviour of the dielectric permittivity of polydomain grains at E > 0 and E < 0 is theoretically established and compared with the experimental results.