期刊
APPLIED PHYSICS LETTERS
卷 78, 期 11, 页码 1565-1567出版社
AMER INST PHYSICS
DOI: 10.1063/1.1354162
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The electronic structure of a GaAsN alloy is calculated using a 4096 atom supercell, with a 70 Ry plane wave basis cutoff and Ga atom 3d electrons as valence electrons. The charge density of this supercell is generated by patching the charge density of a small unit cell with the charge density of bulk GaAs. The local-density-approximation band gap error is corrected by modifying the nonlocal pseudopotentials. A localized nitrogen state [a(1)(N)] is obtained,and it plays an important role in the band gap reduction of GaAsN. (C) 2001 American Institute of Physics.
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