期刊
JOURNAL OF APPLIED PHYSICS
卷 89, 期 6, 页码 3295-3300出版社
AMER INST PHYSICS
DOI: 10.1063/1.1347002
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Far infrared (FIR) absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20-200 mum and compared with the calculated results. Both Be (in the range 3x10(18)-2.6x10(19) cm(-3)) and C (1.8x10(18)-4.7x10(19) cm(-3))-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model with a dominant role of free-carrier absorption in highly doped regions. High reflection from heavily doped thick layers is attractive for the resonant cavity enhanced FIR detectors. (C) 2001 American Institute of Physics.
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