期刊
JOURNAL OF NUCLEAR MATERIALS
卷 294, 期 1-2, 页码 202-205出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-3115(01)00475-5
关键词
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Precipitation-free samples of Rh-doped Ru2Si3 were prepared by the floating zone (FZ) method. The temperature dependences of the electrical resistivities and the Seebeck coefficients of Rh-doped Ru2Si3 (Rh content = 0, 4, 6 mol%) were measured. The electrical resistivities of both 4% and 6% Rh-doped Ru2Si3 were smaller than those of undoped Ru2Si3 prepared by the FZ method and 4% Rh-doped one prepared by other methods. The maximum value of the Seebeck coefficients for all samples was -175 muV/K at 673 K for 4% Rh-doped Ru2Si3. The dimensionless thermoelectric figure of merit reached 0.8 for 4% Rh-doped Ru2Si3 at 1073 K, which was about 50% larger than that of optimized n-type SiGe. (C) 2001 Elsevier Science B.V. All rights reserved.
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