期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 48, 期 2, 页码 189-193出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/23.915364
关键词
radiation detectors; radiation sensors; semiconductor detectors; semiconductor sensors; silicon sensors; three-dimensional; 3-D sensors; (3-D) silicon sensors
The first silicon radiation sensors based on the three-dimensional (3-D) architecture have been successfully fabricated, X-ray spectra from Iron-55 and Americium-241 have been recorded by reading out a 3-D architecture detector via wire bonds to a low-noise, charge-sensitive preamplifier, Using a beta source, coincidences between a 3-D sensor and a plastic scintillator were observed. This is the first observation of ionizing radiation using a silicon sensor based on the 3-D architecture. Details of the apparatus and measurements are described.
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