期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 48, 期 4, 页码 820-823出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/16.915735
关键词
gallium nitride; high-frequency; impact ionization; IMPATT diodes; Wurtzite phase; zinc-blende phase
The dynamic characteristics of Wurtzite (Wz) phase and zincblende (Znb) phase GaN IMPATTs are reported at D-band and compared with Si and GaAs-based IMPATT devices at the same operating conditions and frequency of operations. It is shown that GaN-based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.
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