期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 36, 期 4, 页码 620-628出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/4.913740
关键词
inductors; oscillators; quality factor; RF circuits; self-resonance frequency; stacked spirals; transformers; tuned amplifiers
A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 to 266 nH and self-resonance frequencies of 11.2 to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. Stacked transformers are also introduced that achieve voltage gains of 1.8 to 3 at multigigahertz frequencies. The structures have been fabricated in standard digital CMOS technologies with four and five metal layers.
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