期刊
ELECTROCHIMICA ACTA
卷 46, 期 13-14, 页码 2215-2219出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0013-4686(01)00404-2
关键词
chemical vapor deposition; molybdenum trioxide; thin films; spectroscopic ellipsometry; infrared spectroscopy; structure and optical properties
By chemical vapor deposition at atmospheric pressure using Mo(CO)(6) precursor and Ar/O-2 gas mixture, thin MoO3 films were prepared on Si substrates. The deposition and sublimator temperatures were in the range of 150-200 and 70-90 degreesC, respectively. Investigations of the as-deposited MoO3 films were performed by spectroscopic ellipsometry (300-800 nm) and infrared spectrophotometry (200-1200 cm (-1)). The refractive index of the films was found to be in the range of 1.7-2.3 and the optical band gap energy, E,,, estimated from the absorption analysis, was in the range of 2.76-3.14 eV. The infrared spectra exhibit the characteristic peaks for P-modification of polycrystalline material. (C) 2001 Elsevier Science Ltd. All rights reserved.
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