期刊
PHYSICAL REVIEW LETTERS
卷 86, 期 15, 页码 3384-3387出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.86.3384
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The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs(111)A substrate were characterized using low-temperature scanning tunneling microscopy. Using dI/dV signal mapping, LDOS standing waves were clearly imaged at point defects and within nanostructures. Measurement of the wavelength as a function of bias voltage showed a nonparabolic dispersion relation for the conduction band. The observed wave features originate from the Friedel oscillations of the two-dimensional electron gas in the semiconductor surface accumulation layer.
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