期刊
PHYSICAL REVIEW LETTERS
卷 86, 期 17, 页码 3903-3906出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.86.3903
关键词
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The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single, quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 Fs, resulting in a single-mode spontaneous emission coupling efficiency of 78%.
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