期刊
APPLIED PHYSICS LETTERS
卷 78, 期 17, 页码 2575-2577出版社
AMER INST PHYSICS
DOI: 10.1063/1.1367277
关键词
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Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect were grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting diode (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2x10(-3)% was also demonstrated. These results show that a LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs. (C) 2001 American Institute of Physics.
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