期刊
JOURNAL OF CRYSTAL GROWTH
卷 225, 期 2-4, 页码 544-549出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(01)00950-2
关键词
scanning tunneling microscopy; molecular beam epitaxy; antimonides
We have investigated the effect of a brief As-2-soak at the GaSb surface on the nature of the InAs-on-GaSb interface. We find that As-2 efficiently removes Sb from GaSb and that a controlled As-2-soak may be a necessary step in forming a GaAs-like interface without structural or optical degradation. We observe that the thickness of the GaAs-like interfacial layer and the band-edge transition wavelength in InAs/GaSb superlattices both increase with increasing As-2-soak duration. Published by Elsevier Science B.V.
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