4.6 Article

Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

期刊

IEEE ELECTRON DEVICE LETTERS
卷 22, 期 5, 页码 230-232

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/55.919238

关键词

dispersion; frequency dependence of capacitance; LPCVD oxide dielectrics; metal-insulator-metal (MIM) capacitors; PECVD nitride dielectric; polycide/metal capacitor; precision analog; temperature coefficient of capacitance (TCC) voltage coefficient of capacitance (VCC)

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The frequency dependence of PECVD nitride and LPCVD oxide metal-insulator-metal (MIM) capacitors is investigated with special attention for precision analog applications. At measurement frequencies of 1.0 MHz, nitride MIM capacitors show capacitance linearity close to that of oxide MIM capacitors, indicating potential for precision analog circuit applications. Due to dispersion effects, however, nitride MIM capacitors show significant degradation in capacitor linearity as the frequency: is reduced, which leads to accuracy limitations for precision analog circuits. Oxide MIM capacitors are essentially independent of frequency.

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