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TAYLOR & FRANCIS LTD
DOI: 10.1080/13642810108225442
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Experimental evidence demonstrates that surface states and minority-carrier injection are simultaneously responsible for the anomalous capacitance-voltage (C-V) characteristics of platinum-GaN Schottky diodes. For diodes exhibiting low surface states, a transition point in the C-V curves is identified, which is attributed to tunnelling.
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