4.5 Article Proceedings Paper

Electronic and magnetic properties of 3d transition-metal-doped GaAs

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DOI: 10.1016/S1386-9477(01)00070-4

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electronic band-structure calculation; diluted magnetic semiconductors; ferromagnetic materials

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Electronic band-structure calculations are carried out for the hypothetical zinc-blende phase of 3d transition-metal monoarsenides as well as periodic supercells of 3d transition-metal-doped GaAs by using the full-potential linearized augmented-plane-wave method. The antiferromagnetic state is stable for zinc-blende FeAs, while the ferromagnetic state is stable for zinc-blende VAs, CrAs, and MnAs. It is expected that (Ga,Cr)As becomes ferromagnetic due to the presence of mobile valence-band carriers (holes), since the electronic band-structure in the ferromagnetic state of(Ga,Cr)As is very similar to that of(Ga,Mn)As. (C) 2001 Elsevier Science B.V. All rights reserved.

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