期刊
APPLIED PHYSICS LETTERS
卷 78, 期 19, 页码 2902-2904出版社
AMER INST PHYSICS
DOI: 10.1063/1.1370537
关键词
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In this letter, we present a microscopic analysis of the hot-carrier dynamics governing intersubband light-emitting devices. In particular, a global Monte Carlo simulation scheme is proposed in order to directly access details of the three-dimensional carrier relaxation, without resorting to phenomenological parameters. The competition between intercarrier thermalization and phonon-assisted relaxation in quantum-cascade lasers is investigated and their relative importance on device performance is clearly identified. (C) 2001 American Institute of Physics.
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