期刊
PHYSICAL REVIEW LETTERS
卷 86, 期 19, 页码 4342-4345出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.86.4342
关键词
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The atomic scale oxidation of the alpha -SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.
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