The critical concentration for the metal-nonmetal transition has been calculated fur the polytypes 3C, 4H, and 6H of SiC, duped with Al, Ga, B, and Sc. Three different computational methods have been utilized: the first is Mott's original model, the second is an extended Mott-Hubbard model, and the third is based on the total energy of the metallic and nonmetallic phases. All three methods show similar results. For comparison, calculations fur p-type Ge and Si materials have also been performed.
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