期刊
IEEE ELECTRON DEVICE LETTERS
卷 22, 期 6, 页码 296-298出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/55.924847
关键词
CMOS reliability; dielectric breakdown; MOS devices; reliability modeling; ultrathin gate oxide
A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The nem model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据