4.6 Article

New physics-based analytic approach to the thin-oxide breakdown statistics

期刊

IEEE ELECTRON DEVICE LETTERS
卷 22, 期 6, 页码 296-298

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/55.924847

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CMOS reliability; dielectric breakdown; MOS devices; reliability modeling; ultrathin gate oxide

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A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The nem model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.

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