Oxidation behaviour of Ti3SiC2-based ceramic at 900-1300°C in air

The isothermal oxidation behaviour of Ti3SiC2-based ceramic containing 7 wt.% TIC at 900-1300 degreesC in air has been investigated. The growth of the oxide scales on Ti3SiC2 from 900 degreesC to 1100 degreesC obeyed a parabolic law, whereas at 1200 degreesC and 1300 degreesC, it was a two-step parabolic oxidation process. The scale was composed of an outer layer of coarse-grained TiO2 (rutile). an inner layer of a mixture of fine-grained TiO2 and SiO2 (tridymite). Furthermore, the oxide scale at 1100 degreesC contained a discontinuous SiO2 barrier sandwiched in the outer TiO2 layer. The scales formed on Ti3SiC2 were dense, adhesive and have good adhesion with the substrate during the cyclic oxidation. (C) 2001 Elsevier Science Ltd. All rights reserved.