期刊
APPLIED PHYSICS LETTERS
卷 78, 期 23, 页码 3738-3740出版社
AMER INST PHYSICS
DOI: 10.1063/1.1377617
关键词
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Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films. (C) 2001 American Institute of Physics.
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