期刊
APPLIED PHYSICS LETTERS
卷 78, 期 23, 页码 3735-3737出版社
AMER INST PHYSICS
DOI: 10.1063/1.1377042
关键词
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Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times > 15 min have been observed. (C) 2001 American Institute of Physics.
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