期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 77, 期 1-2, 页码 346-351出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0925-4005(01)00732-8
关键词
metal oxides; MoO3 thin films; H-2 gas sensors; V2O5-overlayer
Structural and gas-sensing properties of the modified MoO3 thin films using a V2O5-overlayer have been investigated. The thin films were deposited by magnetron rf sputtering. The crystallite size or the V2O5-MoO3 thin films is significantly smaller than the pure MoO3 thin films, The electrical resistivity of the films could be drastically reduced. It is found that the H-2-sensing properties of the rf sputtered MoO3 thin films can be improved markedly by addition of a V2O5-overlayer. The sensitivity of the sensor is strongly influenced by the thickness of the sputtered V-overlayers. The optimum operating temperature when considering the response time, recovery time and the sensitivity was found at 150 degreesC. Very low cross sensitivity could be observed towards NO2, NH3, CO, CH4 and So(2) gases. The 50% response (tau (50)) and the recovery time are about 20 s and 1 min, respectively. These results suggest V2O5-MoO3 thin films to be an excellent material for a low temperature, highly sensitive and selective H-2 sensor. (C) 2001 Elsevier Science B.V. All rights reserved.
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