Phosphorous ion implantation in C60 for the photovoltaic applications

Thin films of C-60 deposited on p-type Si(100) wafer are implanted with low energy phosphorous ions for the photovoltaic applications. An attempt has been made on the device fabrication with phosphorous ion implanted C-60 films grown on the p-type Si wafer. The photovoltaic properties of the solar cell structure are discussed with the dark and illuminated J-V characteristics. The efficiency of the structure in the multiple energy phosphorous ion implanted C-60 film/p-Si heterojunction is found to be 0.01% under air mass 1.5 conditions. The low efficiency is attributed to the ion implantation induced damage effects and subsequent larger series resistance values. (C) 2001 American Institute of Physics.