期刊
JOURNAL OF APPLIED PHYSICS
卷 89, 期 12, 页码 8022-8025出版社
AMER INST PHYSICS
DOI: 10.1063/1.1372636
关键词
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CuCr1-xMgxO2, a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO2 is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity is 220 S cm(-1) in CuCr0.95Mg0.05O2, a factor of 7 higher than previously reported for Cu-based p-type delafossites. Undoped films have a conductivity of order 1 S cm(-1). Films are usually polycrystalline on amorphous substrates, but undoped films can be c-axis oriented if deposited at or above 650 degreesC. Optical and ultraviolet transmission data indicate a direct band gap of 3.1 eV. (C) 2001 American Institute of Physics.
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