期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 77, 期 1-2, 页码 375-382出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0925-4005(01)00757-2
关键词
tungsten oxide; sapphire; microstructure; chemiresistive film; conductivity sensor
Highly oriented tungsten trioxide thin films have been grown on (0 1 2) r-cut sapphire substrates using reactive rf magnetron sputtering of a tungsten metal target in various oxygen/argon mixtures. Parameters for growth of stoichiometric tungsten trioxide (WO3) films were determined by X-ray photoelectron spectroscopy (XPS). In situ four-point Van der Pauw conductivity measurements were performed on as grown films and after post-deposition annealing to study changes in the oxygen vacancy population. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) indicate that stoichiometric WO3 films deposited at 450 degreesC are dominated by the tetragonal phase with (0 0 1) orientation along the growth direction, and films deposited at 650 degreesC possess coexisting (0 0 2), (0 2 0), and (2 0 0) in-plane orientations of the monoclinic phase. Tetragonal and monoclinic-phase WO3 films exhibit a change in conductivity of 0.1 Omega (-1) cm(-1) to 20 ppm H2S at 250 degreesC, but display different response kinetics. (C) 2001 Elsevier Science B.V. All rights reserved.
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