期刊
APPLIED PHYSICS LETTERS
卷 78, 期 25, 页码 3980-3982出版社
AMER INST PHYSICS
DOI: 10.1063/1.1379789
关键词
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The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported. Electrical measurements performed on samples grown under Ga-rich conditions show three orders of magnitude higher reverse bias leakage compared with those grown under Ga-lean conditions. Transmission electron microscopy (TEM) studies reveal excess Ga at the surface termination of pure screw dislocations accompanied by a change in the screw dislocation core structure in Ga-rich films. The correlation of transport and TEM results indicates that dislocation electrical activity depends sensitively on dislocation type and growth stoichiometry. (C) 2001 American Institute of Physics.
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