期刊
SURFACE SCIENCE
卷 482, 期 -, 页码 488-494出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(01)00845-7
关键词
angle resolved photoemission; epitaxy; quantum effects; aluminum; silicon; low index single crystal surfaces
Investigations of the thickness dependent electronic structure of ultrathin aluminium films deposited on Si(1 1 1) 7 x 7 using angle resolved photoelectron spectroscopy show the first experimental observation of quantum-well states in this system. Deposition at 100 K favours an abrupt and homogeneous interface and the growth of an epitaxial, quasi two-dimensional Al(1 1 1) overlayer of good crystalline quality, making possible the observation of overlayer states for thicknesses up to 30 Al monolayers. We obtain the decay length of the Al(1 1 1) surface state as well as the energy-dependent phase shift of the electron waves at the Al/Si interface. (C) 2001 Elsevier Science B.V. All rights reserved.
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