Growth and characterization of In-Se films

Thin films of InSe were obtained by thermal and flash evaporation techniques on glass substrates maintained at various temperatures (T-S = 30, 100, 160, 200 degreesC). The best films were obtained for a substrate temperature of 160 degreesC followed by annealing at 200 degreesC for 6 h. Analysis of the films showed strong decomposition of films obtained by thermal evaporation. Structural studies showed the presence of In4Se3 with InSe. The chemical formula of the composite is InxSe1-x. The values of x found by the microprobe analysis vary between 0.52 and 0.56. Optical absorption data are also explained in terms of composition variation. (C) 2001 Elsevier Science Ltd. All rights reserved.