期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 7, 期 4, 页码 624-629出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/2944.974234
关键词
Brewster angle; dielectric constant; phase shift; terahertz beam; thin film
Goniometric time-domain spectroscopy (GTDS), employing an ultrashort electromagnetic (EM) pulse technique, has been developed for measuring the dielectric constant of thin films in a broad band of gigahertz to terahertz. An ultrafast optoelectronic system, including an emitter and a detector unit, is constructed with a theta-2theta goniometer. A silicon wafer was analyzed as the reference substrate material. A sharp pi phase-shift of the reflected EM wave was observed at the Brewster angle of 73.5degrees for a bare silicon wafer. The phase shift for a film on the Si substrate is relatively smooth due to its two surfaces' providing a complex reflectance. The dielectric constant of the film on Si, related with angular dependency of the phase shift, can be extracted by means of fitting the curve or measuring slope of the curve near the Brewster angle. The measured dielectric constants of FLARE, TiOx, and PZT film are reported.
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