期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 19, 期 4, 页码 1115-1118出版社
AMER INST PHYSICS
DOI: 10.1116/1.1382871
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Gallium phosphide (GaP) nanowires of 22 nm in diameter and hundreds micrometers in length were synthesized by laser ablation of a powder mixture of GaP and gallium oxide (Ga2O3). The morphology and microstructure of GaP nanowires were investigated by transmission electron microscopy. Twins and stacking faults were observed on {111} planes of the Gap nanowires with special morphologies, and the formation of these defects was discussed. The growth of the Gal? nanowires can be described by an oxide-assisted mechanism involving several oxidation-reduction reactions. The successful synthesis of GaP nanowires without any metallic impurities is beneficial for further exploration of their fundamental properties and applications. (C) 2001 American Vacuum Society.
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