期刊
JOURNAL OF CRYSTAL GROWTH
卷 227, 期 -, 页码 558-561出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(01)00771-0
关键词
high resolution X-ray diffraction; molecular beam epitaxy; nitrides; semiconducting III-V materials; light emitting diodes
We have studied the effects of N incorporation in Ga(In)P and explored their applications for light-emitting diodes (LEDs). The GaInNP epilayers were grown on (1 0 0) GaP substrates by gas-source MBE using an RF nitrogen radical beam source. Red LEDs based on GaN0.011 P-0.989/GaP double-heterostructure grown on (1 0 0) Gap substrates were successfully fabricated. Compared to conventional AlGaInP LEDs, this LED eliminates etching of the GaAs substrate and wafer-bonding of a transparent GaP substrate. Partially relaxed GaN0.011P0.989 active layers, however, degraded the emission efficiency. Incorporation of In in GaN0.015P0.985 alloy to lattice-match to GaP not only maintains the direct band gap. but also improves the sample structural quality and increases the integrated PL intensity by 40%, compared to GaN0.015P0.985. (C) 2001 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据