期刊
JOURNAL OF CRYSTAL GROWTH
卷 227, 期 -, 页码 51-55出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(01)00631-5
关键词
computer simulation; growth models; mass transfer; surface processes; molecular beam epitaxy; semiconducting III-V materials
We simulate the surface shapes during homoepitaxial overgrowth of patterned GaAs substrates in the sector (0 0 1)(111)A. The model for the shape evolution is based on a diffusion equation in which the orientation-dependent parameters vary according to a simple model of the surface free energy of the zineblende crystal structure. Metastable pseudofacets its well as the initial shape of the step are demonstrated to play a major role in the evolution of the surface during overgrowth. (C) 2001 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据