Enhancement of minority carrier transport in forward biased GaN p-n junction

Forward bias application to a GaN p-n junction (current density similar to 12A/cm(2)) leads to a 1.6-fold increase in the minority electron diffusion length in the p-layer of an epitaxial p-n structure. The effect persists for several days, and is likely associated with electron injection-induced charging of Mg-related deep levels in p-type GaN.