期刊
JOURNAL OF APPLIED PHYSICS
卷 90, 期 2, 页码 915-917出版社
AMER INST PHYSICS
DOI: 10.1063/1.1379563
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We report an experimental determination of the pyroelectric coefficient for strained InGaAs layers in a pseudomorphic piezoelectric In0.17Ga0.83As/GaAs multiquantum well in a p-i-n diode configuration which was grown on a (111)B GaAs substrate by molecular-beam epitaxy. By analyzing the Franz-Keldysh oscillations in the photoreflectance spectra over the temperature range 11-300 K, we obtained the temperature dependence of the piezoelectric field, from which the temperature variation of the piezoelectric constant e(14) was deduced. A linear dependence of e(14) with temperature was observed. Therefore, the strain-induced component of the pyroelectric coefficient of (9.3 +/-0.3)x10(-7) C/m(2) K was determined for this material system. (C) 2001 American Institute of Physics.
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