期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
卷 40, 期 7B, 页码 L773-L775出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.40.L773
关键词
local density of states; point defect; scanning tunneling microscopy/spectroscopy; titanium dioxide; current imaging tunneling spectroscopy
The electronic structure around a point defect in an annealed TiO2 (110)-(1 x 1) surface has been studied by scanning tunneling microscopy/spectroscopy. At a defect site of bridging oxygen, we found an unoccupied defect state at 1.2 eV above the Fermi level. Trapped electrons at the gap states were found on fivefold-coordinated titanium ion rows by current imaging tunneling spectroscopy, We calculated the electronic states of an oxygen defect by the spin-polarized discrete variational (DV)-X alpha method using a cluster model. The calculated defect states are in good agreement with the experimental results.
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