Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication

We combine a self-organizing diblock copolymer system with semiconductor processing to produce silicon capacitors with increased charge storage capacity over planar structures. Our process uses a diblock copolymer thin film as a mask for dry etching to roughen a silicon surface on a 30 nm length scale, which is well below photolithographic resolution limits. Electron microscopy correlates measured capacitance values with silicon etch depth, and the data agree well with a geometric estimate. This block copolymer nanotemplating process is compatible with standard semiconductor processing techniques and is scalable to large wafer dimensions. (C) 2001 American Institute of Physics.