期刊
PHYSICAL REVIEW LETTERS
卷 87, 期 5, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.87.057401
关键词
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For excitation of the model semiconductor GaAs with optical pulses which are both extremely short (5 fs) and extremely intense (approximate to 10(12) Wcm(-2)), we can meet the condition that the Rabi frequency becomes comparable to the band gap frequency-a highly unusual and previously inaccessible situation. Specifically, in this regime, we observe carrier-wave Rabi flopping, a novel effect of nonlinear optics which has been predicted theoretically and which is related to the failure of the area theorem.
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