Epitaxial nanocrystalline tin dioxide thin films grown on (0001) sapphire by femtosecond pulsed laser deposition

Nanocrystalline tin dioxide (SnO2) thin films of different thicknesses were fabricated on the (0001) surface of alpha -Al2O3 (sapphire) using femtosecond pulsed laser deposition. X-ray diffraction and transmission electron microscopy (TEM) analysis revealed that the microstructure of the films strongly depends on the film thickness. The films with a small thickness (< 30 nm) are composed of nanosized columnar (100) oriented grains (3-5 nm in diameter) which grow epitaxially on the substrate with three different in-plane grain orientations. The (101) oriented grains (25 nm in diameter) appear when the film thickness becomes larger than a critical value (about 60 nm). The volume fraction of the (101) grains increases with film thickness. Cross-section TEM studies indicated that the (101) oriented grains nucleate on the top of the (100) oriented nanosized grains and show abnormal grain growth driven by surface energy minimization. As a result, the electrical transport properties are strongly dependent on the film thickness. (C) 2001 American Institute of Physics.