4.7 Review

Using advanced simulation to aid microlithography development

期刊

PROCEEDINGS OF THE IEEE
卷 89, 期 8, 页码 1194-1213

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/5.940288

关键词

lithography; microelectronics; microlithography; optics; simulation

向作者/读者索取更多资源

An early historical overview is first presented here on the use of simulation in optical microlithography, along with a description of the general physical models. This paper then turns to more recent development work in microlithography simulation, which has followed several very different tracts. Three of the most important areas are discussed here. The first involves improvements in the underlying physical models, such as advances beyond the Kirchhoff boundary condition in optical diffraction theory, as well as a deeper understanding into the chemistry and physical behavior of photoresist materials. Such work guides basic understanding both in the optics and photoresist areas. At the other extreme, phenomenological models are being advanced to enable simulation results on large scales to be placed in the hands of device and circuit designers. Finally, optimization of the large number of allowable parameters is a pervasive problem that has received much attention and interest by the engineering community.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据