Electron beam lithography of Moire patterns

An electron beam lithographic procedure based on wet etch and lift-off is described for fabricating Moire patterns on insulating substrates. These patterns can be used for navigating, the tip of a scanning probe microscope towards a specific area and thus solving the problem of locating nanometer scale areas on the substrate where ex situ nanofabrication has been made. The distinct advantage of the method is that metal evaporation on the substrate is done after the definition of the pattern and this allows the metal surface to remain clean for any subsequent nanofabrication. (C) 2001 Elsevier Science B.V. All rights reserved.