期刊
APPLIED PHYSICS LETTERS
卷 79, 期 11, 页码 1608-1610出版社
AMER INST PHYSICS
DOI: 10.1063/1.1401788
关键词
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A vicinal surface of silicon is found that exhibits an atomically accurate step pattern with a period of 5.73 nm, corresponding to 17 atomic rows per (111) terrace. It can be viewed as reconstructed Si(557) surface, where a triple step is combined with a single Si(111)7x7 unit. The driving forces for establishing regular step patterns are discussed. (C) 2001 American Institute of Physics.
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