期刊
SURFACE SCIENCE
卷 491, 期 1-2, 页码 L663-L669出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(01)01413-3
关键词
scanning tunneling microscopy; adatoms; growth; surface thermodynamics (including phase transitions); surface energy
We analyze the stabilization mechanism in the dimer-adatom-stacking-fault (DAS) structure formation on Si(I 1 1). A single faulted (F) half of the unit cell of the DAS structure grows into a small DAS domain, as previously observed by scanning tunneling microscopy. New F-halves are created from a corner-hole of an existing F-half at the edge of the DAS domain. Atom-ic-structure modeling of the formation process of a new F-half implies that a corner-hole shared by two F-halves reduces the number of dangling bonds. We calculated the surface free energy during the 7 x 7 DAS domain growth using an established cell model to deduce the critical size. The critical size of the DAS domain consists of two F-halves sharing one corner-hole at 653 K, which is in good agreement with our experimental results. We conclude that the shared corner-hole has a strong stabilizing effect on the DAS domain. (C) 2001 Elsevier Science B.V. All rights reserved.
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