期刊
JOURNAL OF CRYSTAL GROWTH
卷 231, 期 3, 页码 391-396出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(01)01469-5
关键词
characterization; single crystal growth; nitrides; semiconducting aluminium compounds
We report on the Raman analysis of single-crystalline bulk AIN. AIN phonon modes were investigated as a function of temperature and hydrostatic pressure. Phonon decay channels were studied via the AIN Raman linewidth. Mode Gruneisen parameters describing the low-pressure behavior of the AIN phonon modes were determined and used to estimate hydrostatic stress in amber discolored AIN substrates. (C) 2001 Elsevier Science B.V. All rights reserved.
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