期刊
APPLIED PHYSICS LETTERS
卷 79, 期 16, 页码 2532-2534出版社
AMER INST PHYSICS
DOI: 10.1063/1.1410345
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We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p(++)/n(++) InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale. (C) 2001 American Institute of Physics.
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